Memory device comprising electrically floating body transistor

ABSTRACT

A semiconductor memory cell comprising an electrically floating body. A method of operating the memory cell is provided.

CROSS-REFERENCE

This application is a continuation of co-pending U.S. application Ser.No. 14/685,827, filed on Apr. 14, 2015, which is a divisionalapplication of U.S. application Ser. No. 14/203,235, filed Mar. 10,2014, now U.S. Pat. No. 9,029,922, which claims the benefit of U.S.Provisional Application No. 61/775,521, filed Mar. 9, 2013 and U.S.Provisional Application No. 61/816,153, filed Apr. 25, 2013, each ofwhich applications are hereby incorporated herein, in their entireties,by reference thereto.

FIELD OF THE INVENTION

The present invention relates to semiconductor memory technology. Morespecifically, the present invention relates to a semiconductor memorydevice comprising of an electrically floating body transistor.

BACKGROUND OF THE INVENTION

Semiconductor memory devices are used extensively to store data. Memorydevices can be characterized according to two general types: volatileand non-volatile. Volatile memory devices such as static random accessmemory (SRAM) and dynamic random access memory (DRAM) lose data that isstored therein when power is not continuously supplied thereto.

DRAM based on the electrically floating body effect has been proposed,both on silicon on insulator (SOI) substrate (see for example “ACapacitor-less 1T-DRAM Cell”, S. Okhonin et al., pp. 85-87, IEEEElectron Device Letters, vol. 23, no. 2, February 2002 (“Okhonin”) and“Memory Design Using One-Transistor Gain Cell on SOI”, T. Ohsawa et al.,pp. 152-153, Tech. Digest, 2002 IEEE International Solid-State CircuitsConference, February 2002 (“Ohsawa”), which are hereby incorporatedherein, in their entireties, by reference thereto) and on bulk siliconsubstrate (see, for example, “Further Insight Into the Physics andModeling of Floating-Body Capacitorless DRAMs”, A. Villaret et al., pp.2447-2454, IEEE Transactions on Electron Devices, vol. 52, no. 11,November 2005 (“Villaret”), “Scaled 1T-Bulk Devices Built with CMOS 90nm Technology for Low-cost eDRAM Applications”, R. Ranica, et al., pp.38-41, Tech. Digest, Symposium on VLSI Technology, 2005 (“Ranica”), and“Simulation of Intrinsic Bipolar Transistor Mechanisms for futurecapacitor-less eDRAM on bulk substrate”, R. Pulicani et al., pp.966-969, 2010 17th IEEE International Conference on Electronics,Circuits, and Systems, December 2010 (“Pulicani”), which are herebyincorporated herein, in their entireties, by reference thereto). Suchmemory eliminates the capacitor used in the conventional 1T/1C memorycell, and thus is easier to scale to smaller feature size. In addition,such memory allows for a smaller cell size compared to the conventional1T/1C memory cell. Similar to the 1T/1C DRAM memory cell, the floatingbody DRAM memory cell only has one stable state in a memory cell, andthus requires periodic refresh operations to restore the state of thememory cell.

A bi-stable floating body memory cell, where more than one stable stateexists for each memory cell, has been described in U.S. PatentApplication Publication No. 2010/00246284 to Widjaja et al., titled“Semiconductor Memory Having Floating Body Transistor and Method ofOperating” (“Widjaja-1”) and U.S. Patent Application Publication No.2010/0034041, “Method of Operating Semiconductor Memory Device withFloating Body Transistor Using Silicon Controlled Rectifier Principle”(“Widjaja-2”), which are both hereby incorporated herein, in theirentireties, by reference thereto.

Previous disclosures on floating body memory cell formed on bulk siliconsubstrate requires a buried well layer and insulating layers to isolatea floating body region.

SUMMARY OF THE INVENTION

In one aspect of the present invention, a semiconductor memory cellincludes: a floating body region configured to be charged to a levelindicative of a state of the memory cell selected from at least firstand second states; a first region in electrical contact with thefloating body region; a second region in electrical contact with saidfloating body region and spaced apart from the first region; a gatepositioned between the first and second regions; a first insulatingregion located above the floating body region; second insulating regionsadjacent to the floating body region; a buried layer region locatedbelow the floating body region and the second insulating regions andspaced from the second insulating regions so as not to contact thesecond insulating regions, wherein the floating body region is boundedby the first insulating region above the floating body region, thesecond insulating regions adjacent to the floating body region, and adepletion region formed as a result of an application of a back bias tothe buried layer region.

In at least one embodiment, the semiconductor memory cell furthercomprises a substrate region, wherein the buried layer region ispositioned between the substrate region and the floating body region.

In at least one embodiment, the first region has a first conductivitytype selected from a p-type conductivity type and an n-type conductivitytype; the second region has a first conductivity type selected from ap-type conductivity type and an n-type conductivity type; the floatingbody region has a second conductivity type selected from a p-typeconductivity type and an n-type conductivity type and different from thefirst conductivity type; and the buried layer region has the firstconductivity type.

In at least one embodiment, the back bias is applied to the buried layerregion as a constant positive voltage bias or pulsed positive bias.

In at least one embodiment, the buried layer region is configured toinject charge into or extract charge out of the floating body region tomaintain the state of the memory cell.

In at least one embodiment, the floating body region, the first region,the second region, the gate, the first insulating region, the secondinsulating regions and the buried layer form a memory device, and thesemiconductor memory cell further comprises an access transistorconnected in series with the memory device.

In another aspect of the present invention, a semiconductor memory cellincludes: a floating body region configured to be charged to a levelindicative of a state of the memory cell selected from at least firstand second states; a first region in electrical contact with thefloating body region; a second region in electrical contact with thefloating body region and spaced apart from the first region; a gatepositioned between the first and second regions; a first insulatingregion located above the floating body region; second insulating regionsadjacent to the floating body region; a buried layer region locatedbelow the floating body region and the second insulating regions andspaced from the second insulating regions so as not to contact thesecond insulating regions, wherein the floating body region is boundedby the first insulating region above the floating body region, thesecond insulating regions adjacent to the floating body region, and atop boundary of depletion region formed to the buried layer region as aresult of an application of a back bias, and wherein application of theback bias results in at least two stable floating body charge levels.

In at least one embodiment, the semiconductor memory cell furtherincludes a substrate region, wherein the buried layer region ispositioned between the substrate region and the floating body region.

In at least one embodiment, the first region has a first conductivitytype selected from a p-type conductivity type and an n-type conductivitytype; the second region has the first conductivity type; the floatingbody region has a second conductivity type selected from a p-typeconductivity type and an n-type conductivity type and different from thefirst conductivity type; and the buried layer region has the firstconductivity type.

In at least one embodiment, the back bias is applied to the buried layerregion as a constant positive voltage bias or pulsed positive voltage.

In at least one embodiment, the buried layer region is configured toinject charge into or extract charge out of the floating body region tomaintain the state of the memory cell.

In at least one embodiment, the floating body region, the first region,the second region, the gate, the first insulating region, the secondinsulating regions and the buried layer form a memory device, and thesemiconductor memory cell further includes an access transistorconnected in series with the memory device.

In another aspect of the present invention, a semiconductor memory arrayincludes at least two memory cells, wherein each memory cell includes: afloating body region configured to be charged to a level indicative of astate of the memory cell selected from at least first and second states;a first region in electrical contact with the floating body region; asecond region in electrical contact with the floating body region andspaced apart from the first region; a gate positioned between the firstand second regions; a first insulating region located above the floatingbody region; second insulating regions adjacent to the floating bodyregion; a buried layer region located below the floating body region andthe second insulating regions, wherein at least one of the secondinsulating regions adjacent to the floating body region insulates thememory cell from an adjacent memory cell.

In at least one embodiment, the semiconductor memory cells each furtherinclude a substrate region, wherein the buried layer region ispositioned between the substrate region and the floating body region.

In at least one embodiment, the first region has a first conductivitytype selected from a p-type conductivity type and an n-type conductivitytype; the second region has the first conductivity type; the floatingbody region has a second conductivity type selected from a p-typeconductivity type and an n-type conductivity type and different from thefirst conductivity type; and the buried layer region has the firstconductivity type.

In at least one embodiment, the back bias is applied to the buried layerregion as a constant positive voltage bias or pulsed positive voltage.

In at least one embodiment, the buried layer region is configured toinject charge into or extract charge out of the floating body region tomaintain the state of the memory cell.

In at least one embodiment, the floating body region, the first region,the second region, the gate, the first insulating region, the secondinsulating regions and the buried layer form a memory device, and thesemiconductor memory cell further comprises an access transistorconnected in series with the memory device.

In another aspect of the present invention, a floating body memory cellis formed on bulk silicon substrate (or other semiconductor materials)which is isolated by a depletion region formed through application of abias condition on a back bias region.

These and other features of the invention will become apparent to thosepersons skilled in the art upon reading the details of the devices andmethods as more fully described below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic, cross-sectional illustration of a memory cellaccording to the present invention.

FIG. 1B is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 2A is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 2B is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 3A is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 3B is a schematic, top-view illustration of the memory cell shownin FIG. 3A.

FIG. 4A is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 4B is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 4C is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIGS. 5A and 5B illustrate the energy band diagram formed by the haloregion and the drain region under equilibrium condition and when apositive bias is applied to the drain region, respectively.

FIG. 6 schematically illustrates a write logic-1 operation performed ona memory array according to an embodiment of the present invention.

FIG. 7 illustrates bias conditions applied on the terminals of a memorycell to perform a write logic-1 operation, according to an embodiment ofthe present invention.

FIGS. 8A and 8B illustrate a graph of the drain current as a function ofthe gate voltage for a memory cell with high tunneling current accordingto an embodiment of the present invention and for a memory cell with lowtunneling current, respectively.

FIG. 9 is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 10 is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention.

FIG. 11 schematically illustrates multiple memory cells joined to make amemory array.

FIG. 12 schematically illustrates a holding operation performed on amemory array according to an embodiment of the present invention.

FIG. 13 illustrates bias conditions applied on the terminals of a memorycell to perform a holding operation, according to an embodiment of thepresent invention.

FIG. 14A shows an energy band diagram characterizing an intrinsicbipolar device when a floating body region is positively charged and apositive bias is applied to a buried well region of a memory cellaccording to an embodiment of the present invention.

FIG. 14B shows an energy band diagram of an intrinsic bipolar devicewhen a floating body region is neutrally charged and a positive bias isapplied to a buried well region of a memory cell according to anembodiment of the present invention.

FIG. 15 shows a graph of the net current I flowing into or out of afloating body region as a function of the potential V of the floatingbody, according to an embodiment of the present invention.

FIG. 16A shows a schematic curve of a potential energy surface (PES) ofa memory cell according to an embodiment of the present invention.

FIG. 16B illustrates a charge stored in a floating body region of amemory cell as a function of a potential applied to a buried wellregion, connected to a BW terminal, according to an embodiment of thepresent invention.

FIG. 17 schematically illustrates a read operation performed on a memoryarray according to an embodiment of the present invention.

FIG. 18 illustrates bias conditions applied on the terminals of a memorycell to perform a read operation, according to an embodiment of thepresent invention.

FIG. 19 schematically illustrates a write logic-0 operation performed ona memory array according to an embodiment of the present invention.

FIG. 20 illustrates bias conditions applied on the terminals of a memorycell to perform a write logic-0 operation, according to an embodiment ofthe present invention.

FIG. 21 schematically illustrates a write logic-1 operation performed ona memory array according to an embodiment of the present invention.

FIG. 22 illustrates bias conditions applied on the terminals of a memorycell to perform a write logic-1 operation, according to an embodiment ofthe present invention.

FIG. 23 schematically illustrates a write logic-1 operation usingband-to-band tunneling mechanism performed on a memory array accordingto an embodiment of the present invention.

FIG. 24 illustrates bias conditions applied on the terminals of a memorycell to perform a write logic-1 operation using band-to-band tunnelingmechanism, according to an embodiment of the present invention.

FIG. 25 illustrates voltages applied to the gate and drain regions toperform a write logic-1 operation according to another embodiment of thepresent invention.

FIG. 26 is a schematic, cross-sectional illustration of a memory cellaccording to an embodiment of the present invention.

FIG. 27 is a schematic, cross-sectional illustration of a plurality ofmemory cells connected to form a memory array, according to anembodiment of the present invention.

FIG. 28 is a schematic, cross-sectional illustration of a plurality ofmemory cells connected to form a memory array according to anotherembodiment of the present invention.

FIG. 29 schematically illustrates a depletion region that is formed as aresult of a bias condition applied to the memory cell according to anembodiment of the present invention.

FIG. 30 is a schematic, cross-sectional illustration of a memory cellaccording to another embodiment of the present invention

FIG. 31 schematically illustrates a depletion region that is formed as aresult of a bias condition applied to the memory cell illustrated inFIG. 31.

FIG. 32 illustrates a bias condition applied to the memory cell during awrite logic-0 operation according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Before the present devices and methods are described, it is to beunderstood that this invention is not limited to particular embodimentsdescribed, as such may, of course, vary. It is also to be understoodthat the terminology used herein is for the purpose of describingparticular embodiments only, and is not intended to be limiting, sincethe scope of the present invention will be limited only by the appendedclaims.

Where a range of values is provided, it is understood that eachintervening value, to the tenth of the unit of the lower limit unlessthe context clearly dictates otherwise, between the upper and lowerlimits of that range is also specifically disclosed. Each smaller rangebetween any stated value or intervening value in a stated range and anyother stated or intervening value in that stated range is encompassedwithin the invention. The upper and lower limits of these smaller rangesmay independently be included or excluded in the range, and each rangewhere either, neither or both limits are included in the smaller rangesis also encompassed within the invention, subject to any specificallyexcluded limit in the stated range. Where the stated range includes oneor both of the limits, ranges excluding either or both of those includedlimits are also included in the invention.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. Although any methods andmaterials similar or equivalent to those described herein can be used inthe practice or testing of the present invention, the preferred methodsand materials are now described. All publications mentioned herein areincorporated herein by reference to disclose and describe the methodsand/or materials in connection with which the publications are cited.

It must be noted that as used herein and in the appended claims, thesingular forms “a”, “an”, and “the” include plural referents unless thecontext clearly dictates otherwise. Thus, for example, reference to “amemory cell” includes a plurality of such memory cells and reference to“the region” includes reference to one or more regions and equivalentsthereof known to those skilled in the art, and so forth.

The publications discussed herein are provided solely for theirdisclosure prior to the filing date of the present application. Thedates of publication provided may be different from the actualpublication dates which may need to be independently confirmed.

A schematic cross-sectional view of a memory device 50, according to anembodiment of the present invention, is shown in FIG. 1A. Memory cell 50includes a substrate 12 of a first conductivity type such as p-type, forexample. Substrate 12 is typically made of silicon, but may additionallyor alternatively comprise, for example, germanium, silicon germanium,gallium arsenide, carbon nanotubes, or other semiconductor materials. Insome embodiments of the invention, substrate 12 can be the bulk materialof the semiconductor wafer. In other embodiments, substrate 12A can be awell of the first conductivity type embedded in either a well 29 of thesecond conductivity type (e.g., n-type, when the first conductivity typeis p-type, or vice versa) in the bulk of the semiconductor wafer 12B ofthe first conductivity type or, alternatively, in the bulk of thesemiconductor wafer of the second conductivity type, such as n-type, forexample as shown in FIG. 1B. To simplify the description, the substrate12 will usually be drawn as the semiconductor bulk material as it is inFIG. 1A.

Memory cell 50 also comprises a buried layer region 22 of a secondconductivity type, such as n-type, for example; a floating body region24 of the first conductivity type, such as p-type, for example; andsource/drain regions 16 and 18 of the second conductivity type, such asn-type, for example. Buried layer 22 may be formed by an ionimplantation process on the material of substrate 12. Alternatively,buried layer 22 can be grown epitaxially on top of substrate 12.

The floating body region 24 of the first conductivity is bounded on topby surface 14, source line region 16, drain region 18, and insulatinglayer 62, and on the bottom by buried layer 22. Floating body 24 may bethe portion of the original substrate 12 above buried layer 22 if buriedlayer 22 is implanted. Alternatively, floating body 24 may beepitaxially grown. Depending on how buried layer 22 and floating body 24are formed, floating body 24 may have the same doping as substrate 12 insome embodiments or a different doping, if desired in other embodiments.

A source line region 16 having a second conductivity type, such asn-type, for example, is provided in floating body region 24, so as tobound a portion of the top of the floating body region in a mannerdiscussed above, and is exposed at surface 14. Source line region 16 maybe formed by an implantation process on the material making up substrate12, according to any implantation process known and typically used inthe art. Alternatively, a solid state diffusion or a selective epitaxialgrowth process could be used to form source line region 16.

A bit line region 18 having a second conductivity type, such as n-type,for example, is also provided in floating body region 24, so as to bounda portion of the top of the floating body region in a manner discussedabove, and is exposed at cell surface 14. Bit line region 18 may beformed by an implantation process on the material making up substrate12, according to any implantation process known and typically used inthe art. Alternatively, a solid state diffusion or a selective epitaxialgrowth process could be used to form bit line region 18.

A gate 60 is positioned in between the source line region 16 and thedrain region 18, above the floating body region 24. The gate 60 isinsulated from the floating body region 24 by an insulating layer 62.Insulating layer 62 may be made of silicon oxide and/or other dielectricmaterials, including high-K dielectric materials, such as, but notlimited to, tantalum peroxide, titanium oxide, zirconium oxide, hafniumoxide, and/or aluminum oxide. The gate 60 may be made of, for example,polysilicon material or metal gate electrode, such as tungsten,tantalum, titanium and/or their nitrides.

Insulating layers 26 (like, for example, shallow trench isolation(STI)), may be made of silicon oxide, for example, though otherinsulating materials may be used. The bottom of insulating layer 26 mayreside inside the buried region 22 allowing buried region 22 to becontinuous as shown in FIG. 1. Alternatively, the bottom of insulatinglayer 26 may reside below the buried region 22 as in FIGS. 3A and 3B(shown better in FIG. 3A). This requires a shallower insulating layer28, which insulates the floating body region 24, but allows the buriedlayer 22 to be continuous in the perpendicular direction of thecross-sectional view shown in FIG. 3A. For simplicity, only memory cell50 with continuous buried region 22 in all directions will be shown fromhereon. Alternatively, the bottom of insulating layer 26 may resideabove the buried layer region 22.

Memory cell 50 may comprise the regions 17 and 19 of the firstconductivity type. The regions 17 and 19 of the first conductivity typecan be pocket region as shown in FIGS. 1A and 1B. The regions located atan angle with respect to the surface 14 can be referred as halo regions17 and 19 as shown in FIG. 2A. The regions 17 and 19 of the firstconductivity type can also be formed under the spacer regions 61 asshown in FIG. 2B. Alternatively, the region 19 of the first conductivitytype can be asymmetrically located near the bit line region 18, as shownin FIGS. 4A-4C. The regions 17 and 19 of the first conductivity typewill be referred to as halo regions hereafter for simplicity.

Cell 50 includes several terminals: word line (WL) terminal 70electrically connected to gate 60, bit line (BL) terminal 74electrically connected to bit line region 18, source line (SL) terminal72 electrically connected to source line region 16, buried well (BW)terminal 76 electrically connected to buried layer 22, and substrateterminal 78 electrically connected to the substrate 12. The dopingconcentration of the halo region 17 and/or 19 is such that the built-inelectric field potential between the halo region 17 and the sourceregion 16 and/or between the halo region 19 and the drain region 18 ishigh enough to result in lower potential for band-to-band tunnelingacross the halo region and the source/drain region. To harness the lowerpotential for band-to-band tunneling, the doping concentration of thefirst conductivity type region 17 and/or 19 should be high, and ispreferentially greater than 5×10¹⁸ but not to exceed 5×10¹⁹/cm³.

FIGS. 5A and 5B illustrate the band diagram of the halo region 19 andthe drain region 18 for the halo region 19 with the conventional dopingconcentration and the halo region 19 with the high doping concentration,respectively. FIGS. 5A and 5B illustrate the band diagram when the haloregion 19 is of p-type conductivity and the drain region 18 is of n-typeconductivity, and assumes the same voltages are applied to the sourceregion 16. Under reverse bias conditions as shown in FIG. 5B, electronsmay tunnel from the valence band of the halo region 19 to the conductionband of the drain region 18, leaving excess holes to the floating bodyregion 24 connected to the halo region 19.

Several operations can be performed by memory cell 50 such as holding,read, write logic-1 and write logic-0 operations, and have beendescribed for example in U.S. Patent Application Publication No.2010/00246284 to Widjaja et al., titled “Semiconductor Memory HavingFloating Body Transistor and Method of Operating” (“Widjaja-1”) and U.S.Patent Application Publication No. 2010/0034041, “Method of OperatingSemiconductor Memory Device with Floating Body Transistor Using SiliconControlled Rectifier Principle” (“Widjaja-2”), which are both herebyincorporated herein, in their entireties, by reference thereto. In priorart, the lower limit of the drain region 18 voltage for writing logic-1operation using impact ionization is approximately 1.2 V, greater thanthe band-gap of silicon semiconductor. However, due to the inherentenergy band-bending, the write logic-1 voltage of the memory cell 50 canbe scaled to a voltage less than 1.2V through the formation of highconcentration halo region 17 and/or 19, where band-to-band tunneling isintrinsically present at low voltage of the drain region 18.

FIGS. 6 and 7 illustrate the operating conditions for a write logic-1operation, where the following bias conditions are applied: a positivevoltage is applied to the BW terminal 76 a, zero voltage is applied tothe SL terminal 72 a, a positive voltage is applied to the BL terminal74 a, zero voltage is applied to the WL terminal 70 a, while zerovoltage is applied to the substrate terminal 78. The positive voltageapplied to the BL terminal 74 is sufficiently high to cause holetunneling from the drain region 16 to the floating body 24. When cell 50is in an array 80, the unselected BL terminals 74 (e.g. 74 b, . . . , 74n) will be at zero voltage, and all SL terminals 72 will be at zerovoltage, the unselected WL terminals 70 (e.g. 70 n and any other WLterminals 70 not connected to selected cell 50 a) will be at a slightpositive voltage. The slight positive voltage applied on the unselectedWL terminals 70 increases the potential of the floating bodies 24, andreduces the electric field between the drain regions 18 and the haloregions 19. As a result, no hole injection (or significantly less holeinjection) is observed on the unselected cells 50. In one particularnon-limiting embodiment, about +0.6 volts is applied to the selected BLterminal 74 a, about 0.0 volts is applied to the selected SL terminal 72a, about 0.0 volts is applied to the selected WL terminal 70 a, about+1.2 volts is applied to BW terminal 76 a, and about 0.0 volts isapplied to terminal 78, as illustrated in FIGS. 6 and 7.

The unselected BL terminals 74 are at 0.0 volts, the unselected SLterminals 72 are at 0.0 volts, the unselected WL terminals 70 are at+0.4 volts, about +1.2 volts is applied to the unselected BW terminals76, and about 0.0 volts is applied to the unselected substrate terminals78. However, these voltage levels may vary while maintaining therelative relationships between voltage levels as generally describedabove.

FIGS. 8A and 8B show a comparison between the drain current and gatevoltage relationship of the memory cell 50 with a high tunneling currentaccording to the present invention (FIG. 8A) and that of a conventionalmemory cell with a low tunneling current (FIG. 8B), respectively. With ahigh tunneling current cell 50 of the present invention, because theintrinsic energy band-bending is large enough to create band-to-bandtunneling as explained with regard to FIG. 5B, the operating voltagewhere high hole injection current is observed is when lower than +1.2Vis applied to the drain region and about zero voltage is applied to thegate region (connected to the WL terminal). For a conventional memorycell with a low tunneling current, because the intrinsic energyband-bending is not enough to cause the band-to-band tunneling, the highhole injection current occurs only when a negative voltage is applied tothe gate electrode in order to electrically bend the energy band. Due tothe higher hole injection current (as a result of the halo regions 17and/or 19 having a high doping concentration that results in a highbuilt-in electric field), the high tunneling current memory cell 50 doesnot require negative voltage for the write logic-1 operation, whichsimplifies the design of the periphery circuitry due to absence of (lackof requirement for) a negative voltage generator. In addition, thevoltage applied to the drain region 18 of the high tunneling currentmemory cell 50 is also lower compared to that of the low tunnelingcurrent cell.

FIG. 9 illustrates memory cell 150 according to another embodiment ofthe present invention. Memory cell 150 is constructed as a bulk planarjunctionless memory cell transistor, where the channel region 23 havethe same conductivity type as the source and drain regions 16 and 18 asdescribed for example in “Bulk Planar Junctionless Transistor (BPJLT):An Attractive Device Alternative for Scaling”, S. Gundapaneni et al.,pp. 261-263, IEEE Electron Device Letters, vol. 32, no. 3, March 2011(“Gundapaneni”), which is hereby incorporated herein, in its entirety,by reference thereto. The lateral doping concentration across the I-I′cut line near the surface region 14 is uniform and of the sameconductivity type. The thickness of the channel region 23 has to be thinenough for the gate to fully deplete its majority carrier during whenzero voltage is applied to the gate region 60. In one particularembodiment, the thickness of the channel region 23 is about 10 nm.However, the thickness may vary depending on the thickness of the gatedielectric 62 and the work function of the gate 60 (see below).

Memory cell 150 includes a substrate 12 of a first conductivity typesuch as p-type, for example. Substrate 12 is typically made of silicon,but may additionally or alternatively comprise, for example, germanium,silicon germanium, gallium arsenide, carbon nanotubes, and/or othersemiconductor materials. In some embodiments of the invention, substrate12 can be the bulk material of the semiconductor wafer.

Memory cell 150 also comprises a buried layer region 22 of a secondconductivity type, such as n-type, for example, and a floating bodyregion 24 of the first conductivity type, such as p-type, for example.Buried layer 22 may be formed by an ion implantation process on thematerial of substrate 12. Alternatively, buried layer 22 can be grownepitaxially on top of substrate 12.

The floating body region 24 of the first conductivity type is bounded ontop by channel region 23, source line region 16, and drain region 18,and on the bottom by buried layer 22. Floating body 24 may be theportion of the original substrate 12 above buried layer 22 if buriedlayer 22 is implanted. Alternatively, floating body 24 may beepitaxially grown. Depending on how buried layer 22 and floating body 24are formed, floating body 24 may have the same doping as substrate 12 insome embodiments or a different doping, if desired in other embodiments.

A gate 60 is positioned in between the source line region 16 and thedrain region 18, above the channel region 23. The gate 60 is insulatedfrom the floating body region 24 by an insulating layer 62. Insulatinglayer 62 may be made of silicon oxide and/or other dielectric materials,including high-K dielectric materials, such as, but not limited to,tantalum peroxide, titanium oxide, zirconium oxide, hafnium oxide,and/or aluminum oxide. The gate 60 may be made of, for example,polysilicon material or metal gate electrode, such as tungsten,tantalum, titanium and their nitrides, where the gate electrode 60 has ahigh work function. Also, high work function gate materials such asvalence-band edge metal or p-type polysilicon may be used to form thegate 60. The high work function of the gate electrode 60 will fullydeplete the majority carrier of the channel region 23 near the surfacewhen zero voltage is applied to the gate electrode 60, turning off theconduction path between the source region 16 and the drain region 18.

Insulating layers 26 (like, for example, shallow trench isolation(STI)), may be made of silicon oxide, for example, though otherinsulating materials may be used. The bottom of insulating layer 26 mayreside inside the buried region 22 allowing buried region 22 to becontinuous as shown in FIG. 9. Alternatively, the bottom of insulatinglayer 26 may reside below the buried region 22 (see for example FIGS. 3Aand 3B). For simplicity, only memory cell 150 with continuous buriedregion 22 in all directions will be shown from hereon. Alternatively,the bottom of insulating layer 26 may reside above the buried layerregion 22.

Cell 150 includes several terminals: word line (WL) terminal 70electrically connected to gate 60, bit line (BL) terminal 74electrically connected to bit line region 18, source line (SL) terminal72 electrically connected to source line region 16, buried well (BW)terminal 76 electrically connected to buried layer 22, and substrateterminal 78 electrically connected to the substrate 12. The states ofthe memory cell 150 are determined from the charge stored in thefloating body region 24. If the floating body region 24 is positivelycharged, the conductivity of the memory cell 150 (for example thecurrent flow from the BL terminal 74 to the SL terminal 72) will behigher than if the floating body region is neutral. The highconductivity state will be referred to as the logic-1 state, while thelow conductivity state will be referred to as the logic-0 state. Thesame operations performed on memory cell 50 can be performed on memorycell 150 such as holding, read, write logic-1 and write logic-0operations. The drain voltage applied during write logic-1 state usingimpact ionization mechanism can be reduced on junctionless memory celltransistor 150, because of the higher impact ionization generation onjunctionless transistor, for example as described in “Low subthresholdslope in junctionless multi gate transistors”, C.-W. Lee et al., pp.102106, Applied Physics Letter 96, 2010 (“Lee”), which is herebyincorporated herein, in its entirety, by reference thereto. In oneparticular non-limiting embodiment, about +1.0 volts is applied to theselected BL terminal 74 a, about 0.0 volts is applied to the selected SLterminal 72 a, about 0.0 volts is applied to the selected WL terminal 70a, about +1.2 volts is applied to BW terminal 76 a, and about 0.0 voltsis applied to terminal 78 a. The unselected BL terminals 74 are at 0.0volts, the unselected SL terminals 72 are at 0.0 volts, the unselectedWL terminals 70 are at 0.0 volts, about +1.2 volts is applied to theunselected BW terminals 76, and about 0.0 volts is applied to theunselected substrate terminals 78. However, these voltage levels mayvary while maintaining the relative relationships between voltage levelsas generally described above.

FIG. 10 illustrates memory cell 250 according to another embodiment ofthe present invention. Memory cell 250 also comprises substrate 12 of afirst conductivity type such as p-type, for example, and a buried layerregion 22 of a second conductivity type, such as n-type, for example.Memory cell 250 also comprises an intrinsic-type floating body region24, where no significant amount of dopant species is present. Thefloating body region 24 is bounded on top by the surface 14, theinsulating layer 62, and the source region 16, and drain region 18. Thesource region 16 has a first conductivity type such as p-type, forexample, while the drain region 18 has a second conductivity type suchas n-type, for example. As a result, near the surface region (along theI-I′ cut line shown in FIG. 10, a p-i-n diode is formed from the sourceregion 16, the floating body region 24, and the drain region 18).

A gate 60 is positioned in between the source line region 16 and thedrain region 18, but does not fully overlay the floating body region 24,where the gate region 60 is spaced from the source region 16, formingthe gap region 25, for example as described in U.S. patent applicationSer. No. 13/244,899 to Y. Widjaja, titled “Asymmetric SemiconductorMemory Device Having Electrically Floating Body Transistor”(“Widjaja-3”), which is hereby incorporated herein, in its entirety, byreference thereto.

Insulating layers 26 (like, for example, shallow trench isolation(STI)), may be made of silicon oxide, for example, though otherinsulating materials may be used. The bottom of insulating layer 26 mayreside inside the buried region 22 allowing buried region 22 to becontinuous as shown in FIG. 10. Alternatively, the bottom of insulatinglayer 26 may reside below the buried region 22 as in FIGS. 3A and 3B(shown better in FIG. 3A). This requires a shallower insulating layer28, which insulates the floating body region 24, but allows the buriedlayer 22 to be continuous in the perpendicular direction of thecross-sectional view shown in FIG. 3A. For simplicity, only memory cell250 with continuous buried region 22 in all directions will be shownfrom hereon. Alternatively, the bottom of insulating layer 26 may resideabove the buried layer region 22.

Cell 250 includes several terminals: word line (WL) terminal 70electrically connected to gate 60, bit line (BL) terminal 74electrically connected to bit line region 18, source line (SL) terminal72 electrically connected to source line region 16, buried well (BW)terminal 76 electrically connected to buried layer 22, and substrateterminal 78 electrically connected to the substrate 12.

Memory cell 250 conduction utilizes channel length modulation throughthe gate 60, as described for example in “Impact Ionization MOS(I-MOS)—Part I: Device and Circuit Simulations”, K. Gopalakrishnan, etal., pp. 69-76, IEEE Transactions on Electron Devices, vol. 52, no. 1,January 2005 (“Gopalakrishnan”), which is hereby incorporated herein, inits entirety, by reference thereto. At low gate bias, no inversion isformed in the channel area underneath the gate 60. As the potential ofthe gate 60 is increased, an inversion layer forms underneath the gate60. A strong electric field is developed across the gap region 25,sufficient to generate impact ionization.

The states of the memory cell 250 are determined from the charge storedin the floating body region 24. If the floating body region 24 ispositively charged, the gate voltage where an inversion layer is formedunder the gate 60 (often referred to as the threshold voltage), is lowerthan that if the floating body region 24 is neutral. The memory statehaving a lower threshold voltage will be referred to as the logic-1state, while the memory state having a higher threshold voltage will bereferred to as the logic-0 state.

FIG. 11 schematically illustrates an exemplary embodiment of a memoryarray 280 of memory cells 250 (four exemplary instances of memory cell250 being labeled as 250 a, 250 b, 250 c, and 250 d) arranged in rowsand columns.

In many, but not necessarily all, of the figures where array 280appears, representative memory cell 250 a will be representative of a“selected” memory cell 250 when the operation being described has one(or more in some embodiments) selected memory cells 250. In suchfigures, representative memory cell 250 b will be representative of anunselected memory cell 250 sharing the same row as selectedrepresentative memory cell 250 a, representative memory cell 250 c willbe representative of an unselected memory cell 250 sharing the samecolumn as selected representative memory cell 250 a, and representativememory cell 250 d will be representative of a memory cell 250 sharingneither a row nor a column with selected representative memory cell 250a.

Present in FIG. 11 are word lines 70 a through 70 n, source lines 72 athrough 72 n, bit lines 74 a through 74 p, buried well terminals 76 athrough 76 n, and substrate terminal 78. Representation of thelines/terminal with letters a-n or a through p, includes not onlyembodiments which include literally twelve lines/terminals (i.e., a, b,c, d, e, f, g, h, i, j, k, l, m, n, o, p) or fourteen lines/terminals(i.e., a, b, c, d, e, f, g, h, i, j, k, l, m, n, o, p), but is meant tomore generically represent a plurality of such line terminals, which canbe less than twelve (i.e., as low as one or greater than twelve,thirteen or fourteen (much greater than fourteen up to any positiveinteger practical).

Each of the source lines 72 a through 72 n is associated with a singlerow of memory cells 250 and is coupled to the source line region 16 ofeach memory cell 250 in that row. Each of the bit lines 74 a through 74p is associated with a single column of memory cells 250 and is coupledto the bit line region 18 of each memory cell 250 in that column.

Several operations can be performed on memory cell 250 such as holding,read, write logic-1 and write logic-0 operations.

FIG. 12 schematically illustrates performance of a holding operation onmemory array 280, while FIG. 13 illustrates the bias applied on theterminals of a memory cell 250 during the holding operation. The holdingoperation is performed by applying a positive back bias to the BWterminal 76, a slight positive bias to the SL terminal 72, zero bias onthe WL terminal 70, BL terminal 74, and substrate terminal 78. Thepositive back bias applied to the buried layer region 22 connected tothe BW terminal 76 will maintain the state of the memory cell 250. Thepositive bias applied to the BW terminal 76 needs to generate anelectric field sufficient to trigger an impact ionization mechanism whenthe floating body region 24 is positively charged, as will be describedthrough the band diagram shown in FIGS. 14A and 14B. The impactionization rate as a function of the electric field is for exampledescribed in “Physics of Semiconductor Devices”, Sze S. M. and Ng K. K.,which is hereby incorporated herein, in its entirety, by referencethereto.

In one embodiment the bias conditions for the holding operation onmemory cell 250 are: about 0.0 volts is applied to WL terminal 70, about0.0 volts is applied to BL terminal 74, about +0.4 volts is applied toSL terminal 72, a positive voltage, for example, about +1.0 volts isapplied to BW terminal 76, and about 0.0 volts is applied to thesubstrate terminal 78. In other embodiments, different voltages may beapplied to the various terminals of memory cell 250 and the exemplaryvoltages described are not limiting.

FIGS. 14A and 14B show band diagrams along the II-II′ cut line from FIG.10 illustrating an n-type drain region 18, an intrinsic floating bodyregion 24, and an n-type buried well region 22, when the floating bodyis positively charged and when the floating body is neutral,respectively. The horizontal dashed lines indicate the Fermi levels inthe various regions. The Fermi level is located in the band gap betweenthe solid line 27 indicating the top of the valence band (the bottom ofthe band gap) and the solid line 29 indicating the bottom of theconduction band (the top of the band gap) as is well known in the art.If floating body 24 is positively charged, electrons will flow from thedrain region 18 to the buried well region 22 due the barrier lowering ofthe floating body region 24. As a result of the positive bias applied tothe buried well region 22 (connected to the BW terminal 76), theelectrons are accelerated and create additional hot carriers (hot holeand hot electron pairs) through an impact ionization mechanism. Theresulting hot electrons flow into the BW terminal 76 while the resultinghot holes will subsequently flow into the floating body region 24. Whenthe following condition is met: β×(M−1)≈1—where β is the forwardcommon-emitter current gain and M is the impact ionizationcoefficient—the amount of holes injected into the floating body region24 compensates for the charge lost due to forward bias current betweenthe floating body region 24 and the source line region 16 or bit lineregion 18 and due to holes recombination. This process maintains thecharge (i.e. holes) stored in the floating body region 24 which willkeep the electron flow from the drain region 18 to the buried wellregion 22 for as long as a positive bias is applied to the buried wellregion 22 through BW terminal 76.

The region where the product β×(M−1) approaches 1 and is characterizedby hole current moving into the floating body region is similar to thereverse base current region that has been described for example in “ANew Static Memory Cell Based on Reverse Base Current (RBC) Effect ofBipolar Transistor”, K. Sakui et al., pp. 44-47, International ElectronDevices Meeting, 1988 (“Sakui-1”), “A New Static Memory Cell Based onthe Reverse Base Current Effect of Bipolar Transistors”, K. Sakui etal., pp. 1215-1217, IEEE Transactions on Electron Devices, vol. 36, no.6, June 1989 (“Sakui-2”), “On Bistable Behavior and Open-Base Breakdownof Bipolar Transistors in the Avalanche Regime—Modeling andApplications”, M. Reisch, pp. 1398-1409, IEEE Transactions on ElectronDevices, vol. 39, no. 6, June 1992 (“Reisch”), which are herebyincorporated herein, in their entireties, by reference thereto.

The latching behavior based on the reverse base current region has alsobeen described in a biristor (i.e. bi-stable resistor) for example in“Bistable resistor (Biristor)—Gateless Silicon Nanowire Memory”, J.-W.Han and Y.-K. Choi, pp. 171-172, 2010 Symposium on VLSI Technology,Digest of Technical Papers, 2010“(“J.-W., Han”), which is herebyincorporated herein, in its entirety, by reference thereto. In atwo-terminal biristor device, a refresh operation is still required.J.-W. Han describes a 200 ms data retention for the silicon nanowirebiristor memory. As will be described, the holding operation does notrequire any interruptions to the memory cell 250 access. As a result,the holding operation can be performed for as long as a positive bias isapplied to the buried well region 22 through BW terminal 76.

If floating body 24 is neutrally charged, a state corresponding tologic-0, no (or low) electron flow will occur from the drain region 18to the buried well region 22. As a result, no impact ionization occursand memory cells in the logic-0 state will remain in the logic-0 state.FIG. 14B shows the corresponding energy band diagram when the floatingbody 24 is neutral and when zero voltage is applied to the drain region18 and a positive bias is applied to the buried well region 22. In thisstate, an energy barrier, indicated by solid line 23, exists between thedrain region 18 and the buried well region 22.

In the holding operation described with regards to FIGS. 12 and 13,there is no individually selected memory cell. Rather the holdingoperation will be performed at all cells connected to the same buriedwell terminal 76. In addition, the holding operation does not interruptread or write access to the memory cell 250.

FIG. 15 shows a graph of the net current I flowing into or out of thefloating body region 24 as a function of the potential V_(FB) of thefloating body 24, where a slight positive voltage is applied to thesource region 16, zero voltage is applied to the drain region 18, and apositive voltage is applied to the buried well region 22. A negativecurrent indicates a net current flowing into the floating body region24, while a positive current indicates a net current flowing out of thefloating body region 24. At low floating body 24 potential, between 0Vand V_(FB0) indicated in FIG. 15, the net current is flowing into thefloating body region 24 as a result of the junction between the floatingbody region 24 and the buried well region 22 being reverse biased. Ifthe value of the floating body 24 potential is between V_(FB0) andV_(TS), the current will switch direction, resulting in a net currentflowing out of the floating body region 24. This is because of thejunction formed by the floating body region 24 and the drain region 18is forward biased as the floating body region 24 becomes increasinglymore positive. As a result, if the potential of the floating body region24 is less than V_(TS), then at steady state the floating body region 24will reach V_(FB0). If the potential of the floating body region 24 ishigher than V_(TS), the current will switch direction, resulting in anet current flowing into the floating body region 24. This is as aresult of the base current flowing into the floating body region 24being greater than the junction leakage current. When the floating body24 potential is higher than V_(FB1), the net current will be out of thefloating body region 24. This is because the junction leakage current isonce again greater than the base current flowing into the floating bodyregion 24.

The holding operation results in the floating body memory cell havingtwo stable states: the logic-0 state and the logic-1 state separated byan energy barrier, which are represented by V_(FB0), V_(FB1) and V_(TS),respectively. FIG. 16A shows a schematic curve of a potential energysurface (PES) of the memory cell 250, which shows another representationof the two stable states resulting from applying a back bias to the BWterminal 76 (connected to the buried well region 22).

The values of the floating body 24 potential where the current changesdirection, i.e. V_(FB0), V_(FB1), and V_(TS), can be modulated by thepotential applied to the BW terminal 76. These values are alsotemperature dependent.

The holding/standby operation also results in a larger memory window byincreasing the amount of charge that can be stored in the floating body24. Without the holding/standby operation, the maximum potential thatcan be stored in the floating body 24 is limited to the flat bandvoltage V_(FB) as the junction leakage current to regions 16 and 18increases exponentially at floating body potential greater than V_(FB).However, by applying a positive voltage to substrate terminal 78, thebipolar action results in a hole current flowing into the floating body24, compensating for the junction leakage current between floating body24 and regions 16 and 18. As a result, the maximum charge V_(MC) storedin floating body 24 can be increased by applying a positive bias to thesubstrate terminal 78 as shown in FIG. 16B. The increase in the maximumcharge stored in the floating body 24 results in a larger memory window.

Floating body DRAM cells described in Ranica-1, Ranica-2, Villaret, andPulicani only exhibit one stable state, which is often assigned aslogic-0 state. Villaret describes the intrinsic bipolar transistorsenhance the data retention of logic-1 state, by drawing the electronswhich otherwise would recombine with the holes stored in the floatingbody region. However, only one stable state is observed because there isno hole injection into the floating body region to compensate for thecharge leakage and recombination.

FIGS. 17 and 18 illustrate the read operation performed on the memoryarray 280 and the bias conditions applied to the selected memory cell250 a, respectively. The read operation is performed by applying thefollowing bias conditions: a positive voltage is applied to the selectedWL terminal 70 a, a positive voltage is applied to the selected BLterminal 74 a, a slight positive voltage is applied to the selected SLterminal 72 a, a positive voltage is applied to the selected BW terminal76 a, and zero voltage is applied to the substrate terminal 78. Thefollowing bias is applied to the unselected terminals: zero voltage isapplied to the unselected WL terminals 70, zero voltage is applied tothe unselected BL terminals 74, a slight positive voltage is applied tothe unselected SL terminals 72, zero or positive voltage is applied tothe unselected BW terminals 76, and zero voltage is applied to theunselected substrate terminals 78.

The charge stored in the floating body region 24 will modulate thethreshold gate voltage to form an inversion layer in the channel regionunderneath the gate. The gate voltage during the read operation isselected such that inversion layer is formed when the memory cell 250 isin logic-1 state (i.e. when the floating body region 24 is positivelycharged) and no inversion layer is formed when the memory cell 250 is inlogic-0 state (i.e. when the floating body region 24 is neutral). AsGopalakrishnan describes, memory cell 250 has a steep subthresholdslope, resulting in low leakage current from the unselected cells. As aresult, the sensing operation of the state of the memory cell 250 may beperformed faster.

In one particular non-limiting embodiment, about +0.4 volts is appliedto the selected WL terminal 70 a, about +1.0 volts is applied to theselected BL terminal 74 a, about +0.4 volts is applied to the selectedSL terminal 72 a, about +1.0 volts is applied to the selected BWterminal 76 a, and about 0.0 volts is applied to the selected substrateterminal 78 a. However, these voltage levels may vary while maintainingthe relative relationships between voltage levels as generally describedabove.

FIGS. 19 and 20 illustrate a row write logic-0 operation performed onthe memory array 280 and the bias conditions applied to the terminals ofthe selected memory cell 250 a, respectively. The following biasconditions are applied to the selected terminals to perform a row writelogic-0 operation: zero voltage is applied to the selected WL terminal70 a, zero voltage is applied to the selected SL terminal 72 a, zerovoltage is applied to the selected BL terminal 74 a, zero voltage or apositive voltage is applied to the selected BW terminal 76 a, and zerovoltage is applied to the selected substrate terminal 78 a. Thefollowing bias conditions are applied to the unselected terminals: zerovoltage is applied to the unselected WL terminals 70, a slight positivevoltage is applied to the unselected SL terminals 72, zero voltage isapplied to the unselected BL terminals 74, zero or positive voltage isapplied to the unselected BW terminals, and zero voltage is applied tothe unselected substrate terminals 78.

Removing the slight positive voltage that is applied to the selected SLterminal 72 removes the potential well that allows for positive chargestorage in the floating body region 24. As a result, holes will beevacuated from the floating body region 24 and will flow to the sourceregion 16.

In one particular non-limiting embodiment, about 0.0 volts is applied tothe selected WL terminal 70 a, about 0.0 volts is applied to theselected BL terminal 74 a, about 0.0 volts is applied to the selected SLterminal 72 a, about 0.0 volts is applied to the selected BW terminal 76a, and about 0.0 volts is applied to the selected substrate terminal 78a. However, these voltage levels may vary while maintaining the relativerelationships between voltage levels as generally described above.

FIGS. 21 and 22 illustrate a write logic-1 operation performed on thememory array 280 and the bias conditions applied to the terminals of theselected memory cell 250 a, respectively. The following bias conditionsare applied to the selected terminals to perform a write logic-1operation: a positive voltage is applied to the selected WL terminal 70a, a slight positive voltage is applied to the SL terminal 72 a, apositive voltage is applied to the selected BL terminal 74 a, a positivevoltage is applied to the selected BW terminal 76 a, and zero voltage isapplied to the substrate terminal 78 a. The following bias conditionsare applied to the unselected terminals: zero voltage is applied to theunselected WL terminals 70, a slight positive voltage is applied to theunselected SL terminals 72, zero voltage is applied to the unselected BLterminals 74, zero or positive voltage is applied to the unselected BWterminals, and zero voltage is applied to the unselected substrateterminals 78.

The positive voltage applied to the gate 60 of the memory cell 250 hasto be sufficiently high to create an inversion layer underneath the gate60, regardless of the state of the memory cell 250. This will result inan inversion layer at the same potential level as the voltage that isapplied to the bit line region 18. Hence, a strong electric field willbe developed across the gap region 25, which results in hole injectioninto the floating body region 24 as a result of impact ionization.

In one particular non-limiting embodiment, about +1.0 volts is appliedto the selected WL terminal 70 a, about +1.8 volts is applied to theselected BL terminal 74 a, about +0.4 volts is applied to the selectedSL terminal 72 a, about +1.0 volts is applied to the selected BWterminal 76 a, and about 0.0 volts is applied to the selected substrateterminal 78 a. However, these voltage levels may vary while maintainingthe relative relationships between voltage levels as generally describedabove.

FIGS. 23 and 24 illustrate a write logic-1 operation using aband-to-band tunneling mechanism performed on the memory array 280 andthe bias conditions applied to the terminals of the selected memory cell250 a, respectively. The following bias conditions are applied to theselected terminals to perform a write logic-1 operation: a negativevoltage is applied to the selected WL terminal 70 a, a slight positivevoltage is applied to the SL terminal 72 a, a positive voltage isapplied to the selected BL terminal 74 a, a positive voltage is appliedto the selected BW terminal 76 a, and zero voltage is applied to thesubstrate terminal 78 a. The following bias conditions are applied tothe unselected terminals: zero voltage is applied to the unselected WLterminals 70, a slight positive voltage is applied to the unselected SLterminals 72, zero voltage is applied to the unselected BL terminals 74,zero or positive voltage is applied to the unselected BW terminals, andzero voltage is applied to the unselected substrate terminals 78.

The negative voltage on the gate 60 (connected to WL terminal 70) andthe positive voltage on bit line region 18 (connected to BL terminal 74)create a strong electric field (for example, about 10⁶ V/cm in silicon,as described in Sze, p. 104) between the bit line region 18 and thefloating body region 24 in the proximity of gate 60. This bends theenergy band sharply upward near the gate and bit line junction overlapregion, causing electrons to tunnel from the valence band to theconduction band, leaving holes in the valence band. The electrons whichtunnel across the energy band become the drain leakage current, whilethe holes are injected into floating body region 24 and become the holecharge that creates the logic-1 state.

In one particular non-limiting embodiment, about −1.0 volts is appliedto the selected WL terminal 70 a, about +1.0 volts is applied to theselected BL terminal 74 a, about +0.4 volts is applied to the selectedSL terminal 72 a, about +1.0 volts is applied to the selected BWterminal 76 a, and about 0.0 volts is applied to the selected substrateterminal 78 a. However, these voltage levels may vary while maintainingthe relative relationships between voltage levels as generally describedabove.

FIG. 25 illustrates a method to further lower the voltage applied to thebit line region 18 during the write logic-1 operation, which can beapplied to memory cells 50, 150, and 250, and to the bi-stable memorycells described for example in Widjaja-1 and Widjaja-2. FIG. 25illustrates the voltage applied to the BL terminal 74 and the BWterminal 76. To further lower the voltage applied to the BL terminal 74,the voltage applied to the BW terminal 76 may be increased during thewrite logic-1 operation. Increasing the BW terminal 76 lowers thebarrier for the electron flow during the write logic-1 operation, andthus increasing the holes generated under the impact ionizationmechanism.

A schematic cross-sectional view of a memory device 350 according toanother embodiment of the present invention is shown in FIG. 26. Memorycell 350 includes a substrate 12 of a first conductivity type such asp-type, for example. Substrate 12 is typically made of silicon, but mayalternatively or additionally comprise, for example, germanium, silicongermanium, gallium arsenide, carbon nanotubes, and/or othersemiconductor materials. In some embodiments of the invention, substrate12 can be the bulk material of the semiconductor wafer. In otherembodiments, substrate 12 can be a well of the first conductivity typeembedded in either a well of the second conductivity type or,alternatively, in the bulk of the semiconductor wafer of the secondconductivity type, such as n-type, for example (not shown in thefigures). To simplify the description, the substrate 12 will usually bedrawn as the semiconductor bulk material as it is in FIG. 26.

Memory cell 350 also comprises a buried layer region 22 of a secondconductivity type, such as n-type, for example; a floating body region24 of the first conductivity type, such as p-type, for example; andsource/drain regions 16 and 18 of the second conductivity type, such asn-type, for example.

Buried layer 22 may be formed by an ion implantation process on thematerial of substrate 12. Alternatively, buried layer 22 can also begrown epitaxially on top of substrate 12.

The floating body region 24 of the first conductivity type is bounded ontop by surface 14, source line region 16, drain region 18, andinsulating layer 62. Floating body 24 may be the portion of the originalsubstrate 12 above buried layer 22 if buried layer 22 is implanted.Alternatively, floating body 24 may be epitaxially grown. Depending onhow buried layer 22 and floating body 24 are formed, floating body 24may have the same doping as substrate 12 in some embodiments or adifferent doping, if desired in other embodiments.

A source line region 16 having a second conductivity type, such asn-type, for example, is provided in floating body region 24, so as tobound a portion of the top of the floating body region in a mannerdiscussed above, and is exposed at surface 14. Source line region 16 maybe formed by an implantation process on the material making up substrate12, according to any implantation process known and typically used inthe art. Alternatively, a solid state diffusion or a selective epitaxialgrowth process could be used to form source line region 16.

A bit line region 18 having a second conductivity type, such as n-type,for example, is also provided in floating body region 24, so as to bounda portion of the top of the floating body region in a manner discussedabove, and is exposed at cell surface 14. Bit line region 18 may beformed by an implantation process on the material making up substrate12, according to any implantation process known and typically used inthe art. Alternatively, a solid state diffusion or a selective epitaxialgrowth process could be used to form bit line region 18.

A gate 60 is positioned in between the source line region 16 and thedrain region 18, above the floating body region 24. The gate 60 isinsulated from the floating body region 24 by an insulating layer 62.Insulating layer 62 may be made of silicon oxide and/or other dielectricmaterials, including high-K dielectric materials, such as, but notlimited to, tantalum peroxide, titanium oxide, zirconium oxide, hafniumoxide, and/or aluminum oxide. The gate 60 may be made of, for example,polysilicon material or metal gate electrode, such as tungsten,tantalum, titanium and/or their nitrides.

Insulating layers 26 (like, for example, shallow trench isolation(STI)), may be made of silicon oxide, for example, though otherinsulating materials may be used. The bottom of insulating layer 26resides above the buried layer region 22. As can be seen in FIG. 26,there is no physical separation between adjacent memory cells 350 sincethe floating body region 24 of one memory cell will be connected toadjacent memory cells 350 when a plurality of memory cells 350 areconnected to form a memory array 380. The isolation of floating bodyregion 24 of adjacent memory cells 350 is accomplished electrically,through an application of a potential to the buried layer region 22,thus isolating floating body regions 24 of adjacent memory cells 350.

Cell 350 includes several terminals: word line (WL) terminal 70electrically connected to gate 60, bit line (BL) terminal 74electrically connected to bit line region 18, source line (SL) terminal72 electrically connected to source line region 16, buried well (BW)terminal 76 electrically connected to buried layer 22, and substrateterminal 78 electrically connected to the substrate 12.

FIG. 27 illustrates a cross-sectional view of a plurality of memorycells 350 connected to form a memory array 380. FIG. 27 also illustratesa contact made to the buried layer region 22, which is made throughregions 20 having second conductivity type. FIG. 27 illustrates a memoryarray 380 having region 20 on both sides of the plurality of the memorycells 350. FIG. 28 illustrates a memory array 380 according to anotherembodiment of the present invention, where the region 20 (which connectsBW terminal 76 to the buried layer region 22), is only provided on oneside of the plurality of the memory cells 350. As a result, the floatingbody region 24 is connected to the substrate region 12.

FIG. 29 illustrates a depletion region 23 (enclosed in dashed lines)formed in the junction of floating body region 24 and the buried layer22 as a result of an application of a back bias to the BW terminal 76.If positive voltage is applied to the buried layer 22 while the sourceline region 16 or the bit line region 18 is grounded or negativelybiased, depletion region 23 extends into the floating body region 24because of reverse biased p-n junction, and the top portion of thedepletion region 23 resides above the bottom of the insulating layer 26.Therefore, the floating body region 24 of one memory cell 350 is nowisolated from that of adjacent memory cells 350 and forms a potentialwell for excess charge storage. A depletion region extends further intothe region with a lower doping concentration. FIG. 29 illustrates anexample where the depletion region 23 extends deeper into the floatingbody region 24, assuming that the doping concentration of the floatingbody region 24 is lighter than the doping concentration of the buriedwell region 22. However, this is only provided as an illustration and isnot limiting.

In one embodiment, the bias conditions applied to the memory cell 350(e.g., to establish the depletion region, as well as to establish aholding condition as described in the Widjaja references incorporatedherein) are: about 0V is applied to the WL terminal 70, SL terminal 72,BL terminal 74, substrate terminal 78, and about +3.0V is applied to theBW terminal 76. These example bias conditions are provided for an n-typememory cell 350 (where the source region 16 and drain region 18 are ofn-type conductivity, the floating body region 24 is of p-typeconductivity, the buried layer region 22 is of n-type conductivity, andthe substrate region 12 is of p-type conductivity). In otherembodiments, different voltages may be applied to the various terminalsof memory cell 350 and the exemplary voltages described are notlimiting.

The operation of the memory cell 350 as a capacitorless DRAM has beendescribed in Okhonin, Ohsawa, Villaret, Ranica, and Pulicani, while aholding operation to form a bi-stable memory cell, analogous to an SRAMcell, has been described in Widjaja-1 and Widjaja-2. A write logic-0operation according to another embodiment of the present invention maybe performed by removing the potential applied to the buried layerregion 22. The removal of the back bias to the buried layer region 22will in turn result in the removal of the depletion region 23, causingany charges stored in the floating region 24 to be removed, eitherthrough charge sharing to adjacent memory cells 350, or to the substrate12. This write logic-0 operation is performed in parallel to all thecells connected to the same BW terminal 76. A parallel write logic-0operation may also be used to accelerate the testing of the memorydevice. In order to write arbitrary binary data to different memorycells 350, a write logic-0 operation is first performed on all thememory cells to be written, followed by one or more write logic-1operations on the memory cells that must be written to logic-1.

FIG. 30 illustrates memory cell 450 according to another embodiment ofthe present invention. Memory cell 450 consists of a memory device 450Mand access device 450A, that are connected in series, as described forexample in PCT/US13/26466 to Widjaja et al., titled “Memory CellComprising First and Second Transistors and Methods of Operating”, whichis hereby incorporated herein, in its entirety, by reference thereto.

Memory cell 450 comprises a memory device 450M having a buried layerregion 22, located below the insulating region 26, similar to the memorycell 350 illustrated in FIG. 26. Access transistor 450A consists of awell region 24 (which is physically connected to the floating bodyregion 24 of the memory device 450M, but will be electrically separatedthrough an application of a potential to the buried well region 22),source region 19 and drain region 20, and gate region 64 which isisolated from the well region 24 by an insulating layer 66. Insulatinglayer 66 may be made of silicon oxide and/or other dielectric materials,including high-K dielectric materials, such as, but not limited to,tantalum peroxide, titanium oxide, zirconium oxide, hafnium oxide,and/or aluminum oxide. The gate 64 may be made of, for example,polysilicon material or metal gate electrode, such as tungsten,tantalum, titanium and their nitrides.

The drain region 18 of the memory device 450M is connected to the sourceregion 19 of the access device 450A through a conductive element 94. Theconductive element 94 may be formed of, but not limited to, tungsten orsilicided silicon.

In addition to the SL terminal 72 and BL terminal 74, memory cell 450also includes word line 1 (WL1) terminal 70, which is electricallyconnected to the gate 60 of the memory device 450M, word line 2 (WL2)terminal 71, which is electrically connected to the gate 64 of theaccess transistor 450A, buried well (BW) terminal 76, which iselectrically connected to the buried well region 22 of the memory device450M, and substrate (SUB) terminal 78, which is connected to thesubstrate region 12.

As illustrated in FIG. 31, application of a potential to the buried wellregion 22 of the memory device 450M will electrically isolate thefloating body region 24 from the substrate region 12 as well as fromadjacent floating body region 24 of adjacent memory cells 450. In oneembodiment, the bias conditions applied to the memory cell 450 (e.g., toelectrically isolate the floating body region as well as to establishthe holding condition, as described in the Widjaja referencesincorporated herein) are: about 0V is applied to the WL1 terminal 70,WL2 terminal 71, SL terminal 72, BL terminal 74, substrate terminal 78,and about +3.0V is applied to the BW terminal 76. These example biasconditions are provided for an n-type memory device 450M (where thesource region 16 and drain region 18 are of n-type conductivity, thefloating body region 24 is of p-type conductivity, the buried layerregion 22 is of n-type conductivity, and the substrate region 12 is ofp-type conductivity). In other embodiments, different voltages may beapplied to the various terminals of memory cell 450 and the exemplaryvoltages described are not limiting.

A write logic-0 operation according to another embodiment of the presentinvention may be performed by removing the potential applied to theburied layer region 22. The removal of the back bias to the buried layerregion 22 will in turn result in the removal of the depletion region 23,causing any charges stored in the floating region 24 to be removed,either through charge sharing to adjacent memory cells 450, or to thesubstrate 12. This write logic-0 operation is performed in parallel toall the cells connected to the same BW terminal 76. A parallel writelogic-0 operation may also be used to accelerate the testing of thememory device. In order to write arbitrary binary data to differentmemory cells 450, a write logic-0 operation is first performed on allthe memory cells to be written, followed by one or more write logic-1operations on the memory cells that must be written to logic-1.

FIG. 32 illustrates the bias conditions for the write logic-0 operationperformed on a memory array 480 comprising a plurality of memory cells450 arranged in rows and columns.

That which is claimed is:
 1. A semiconductor memory device comprising: amemory cell comprising: a floating body region configured to be chargedto a level indicative of a state of the memory cell selected from atleast first and second states; a first region in electrical contact withsaid floating body region; a second region in electrical contact withsaid floating body region and spaced apart from said first region; agate positioned between said first and second regions; a firstinsulating region located above said floating body region; secondinsulating regions adjacent to said floating body region; a buried layerregion located below said floating body region and said secondinsulating regions and spaced from said second insulating regions so asnot to contact said second insulating regions; and a third region inelectrical contact with said buried layer region; and a substrate regiondifferent from said third region and underlying said buried layerregion; wherein said floating body region is bounded by said firstinsulating region above said floating body region, said secondinsulating regions adjacent to said floating body region, and adepletion region formed as a result of an application of a back bias tosaid buried layer region.
 2. The semiconductor memory device of claim 1,wherein said buried layer region is positioned between said substrateregion and said floating body region.
 3. The semiconductor memory deviceof claim 1, wherein said first region has a first conductivity typeselected from a p-type conductivity type and an n-type conductivitytype; said second region has said first conductivity type; said floatingbody region has a second conductivity type selected from said p-typeconductivity type and said n-type conductivity type and different fromsaid first conductivity type; said buried layer region has said firstconductivity type; and said third region has said first conductivitytype.
 4. The semiconductor memory device of claim 1, wherein said backbias is applied as a constant positive voltage bias.
 5. Thesemiconductor memory device of claim 1, wherein said buried layer regionis configured to inject charge into or extract charge out of saidfloating body region to maintain said state of the memory cell.
 6. Asemiconductor memory array comprising at least two memory cells, whereineach said memory cell comprises: a floating body region configured to becharged to a level indicative of a state of the memory cell selectedfrom at least first and second states; a first region in electricalcontact with said floating body region; a second region in electricalcontact with said floating body region and spaced apart from said firstregion; a gate positioned between said first and second regions; a firstinsulating region located above said floating body region; secondinsulating regions adjacent to said floating body region; a buried layerregion located below said floating body region and said secondinsulating regions; a third region in electrical contact with saidburied layer region; and a substrate region different from said thirdregion and underlying said buried layer region; wherein at least one ofsaid floating body regions is integral with or connected to another ofsaid floating body regions; and wherein said array further comprises athird region in electrical contact with said buried layer region.
 7. Thesemiconductor memory array of claim 6, wherein each said memory cellfurther comprises a substrate region, wherein said buried layer regionis positioned between said substrate region and said floating bodyregion.
 8. The semiconductor memory array of claim 6, wherein said firstregion has a first conductivity type selected from a p-type conductivitytype and an n-type conductivity type; said second region has said firstconductivity type; said floating body region has a second conductivitytype selected from said p-type conductivity type and said n-typeconductivity type and different from said first conductivity type; saidburied layer region has said first conductivity type; and said thirdregion has said first conductivity type.
 9. The semiconductor memoryarray of claim 6, wherein said buried layer region is configured toinject charge into or extract charge out of said floating body region tomaintain said state of the memory cell.
 10. A semiconductor memory arraycomprising at least two memory cells, wherein each said memory cellcomprises: a floating body region configured to be charged to a levelindicative of a state of the memory cell selected from at least firstand second states; a first region in electrical contact with saidfloating body region; a second region in electrical contact with saidfloating body region and spaced apart from said first region; a gatepositioned between said first and second regions; a first insulatingregion located above said floating body region; second insulatingregions adjacent to said floating body region; and a buried layer regionlocated below said floating body region and said second insulatingregions, wherein at least one of said floating body regions is integralwith or connected to another of said floating body regions; wherein adepletion region formed as a result of an application of a back bias tosaid buried layer region and at least one of said second insulatingregions adjacent to said floating body region insulates said memory cellfrom an adjacent memory cell, wherein application of said back biasresults in at least two stable floating body charge levels; and whereinsaid array further comprises a third region in electrical contact withsaid buried layer region, said third region having a conductivity typethe same as a conductivity type of said buried layer.
 11. Thesemiconductor memory array of claim 10, wherein each said memory cellfurther comprises a substrate region, wherein said buried layer regionis positioned between said substrate region and said floating bodyregion.
 12. The semiconductor memory array of claim 10, wherein saidfirst region has a first conductivity type selected from a p-typeconductivity type and an n-type conductivity type; said second regionhas said first conductivity type; said floating body region has a secondconductivity type selected from said p-type conductivity type and saidn-type conductivity type and different from said first conductivitytype; said buried layer region has said first conductivity type; andsaid third region has said first conductivity type.
 13. Thesemiconductor memory cell of claim 10, wherein said back bias is appliedas a constant positive voltage bias.
 14. The semiconductor memory cellof claim 10, wherein said buried layer region is configured to injectcharge into or extract charge out of said floating body region tomaintain said state of the memory cell.